tm november 2008 FDZ391P p-channel 1.5v powertrench ? wl-csp mosfet ?2008 fairchild semiconductor corporation FDZ391P rev.b1 www.fairchildsemi.com 1 bottom top d d s s s g pin 1 s g d FDZ391P p-channel 1.5 v powertrench ? thin wl-csp mosfet -20 v, -3 a, 85 m ? features ? max r ds(on) = 85 m ? at v gs = -4.5 v, i d = -1 a ? max r ds(on) = 123 m ? at v gs = -2.5 v, i d = -1 a ? max r ds(on) = 200 m ? at v gs = -1.5 v, i d = -1 a ? occupies only 1.5 mm 2 of pcb area ? ultra-thin package : less than 0.4 mm height when mounted to pcb ? rohs compliant general description designed on fairchild's advanced 1.5 v powertrench process with state of the art "low pitch" thin wlcsp packaging process, the FDZ391P minimizes both pcb space and r ds(on) . this advanced wlcsp mosfet embodies a breakthrough in packaging technology which enabl es the device to combine excellent thermal transfer charac teristics, ultra-low profile packaging, low gate charge, and low r ds(on) . applications ? battery management ? load switch ? battery protection mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -20 v v gs gate to source voltage 8 v i d drain current -continuous t a = 25 c (note 1a) -3 a -pulsed -15 p d power dissipation t a = 25 c (note 1a) 1.9 w power dissipation t a = 25 c (note 1b) 0.9 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 65 c/w r ja thermal resistance, junction to ambient (note 1b) 133 device marking device package reel size tape width quantity 6 FDZ391P wl-csp thin 7 ?? 8 mm 5000 units
FDZ391P p-channel 1.5v powertrench ? wl-csp mosfet FDZ391P rev.b1 www.fairchildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = -250 a, v gs = 0 v -20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25 c -12 mv / c i dss zero gate voltage drain current v ds = -16 v, v gs = 0 v -1 a i gss gate to source leakage current v gs = 8 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a -0.4 -0.6 -1.5 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = -250 a, referenced to 25 c 2 mv/c r ds(on) drain to source on resistance v gs = -4.5 v, i d = -1 a 74 85 m ? v gs = -2.5 v, i d = -1 a 90 123 v gs = -1.5 v, i d = -1 a 140 200 v gs = -4.5 v, i d = -1 a t j = 125 c 100 123 i d(on) on to state drain current v gs = -4.5 v, v ds = - 5 v -10 a g fs forward transconductance v ds = -5 v, i d = -1 a 7 s c iss input capacitance v ds = -10 v, v gs = 0 v, f = 1 mhz 800 1065 pf c oss output capacitance 155 205 pf c rss reverse transfer capacitance 90 135 pf r g gate resistance f = 1 mhz 9 ? t d(on) turn-on delay time v dd = -10 v, i d = -1 a v gs = -4.5 v, r gen = 6 ? 11 20 ns t r rise time 10 20 ns t d(off) turn-off delay time 50 80 ns t f fall time 30 48 ns q g total gate charge v gs = -4.5 v v dd = -10 v i d = -1 a 913nc q gs gate to source gate charge 1 nc q gd gate to drain ?miller? charge 2 nc i s maximum continuous drain-source diode forward current -1.1 a v sd source to drain diode forward voltage v gs = 0 v, i s = -1.1 a (note 2) -0.7 -1.2 v t rr reverse recovery time i f = -1 a, di/dt = 100 a/ s 21 ns q rr reverse recovery charge 5 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 s, duty cycle < 2.0%. a. 65 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 133 c/w when mounted on a minimum pad of 2 oz copper.
FDZ391P p-channel 1.5v powertrench ? wl-csp mosfet FDZ391P rev.b1 www.fairchildsemi.com 3 typical characteristics t j = 25 c unless otherwise noted figure 1. 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 v gs = -3.5 v v gs = -4.5 v pulse duration = 300 p s duty cycle = 2.0% max v gs = -2.5 v v gs = -1.5 v v gs = -2.0 v -i d , drain current (a) -v ds , drain to source voltage (v) on region characteristics figure 2. 0246810121416 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs = -4.5 v pulse duration = 300 p s duty cycle = 2.0% max normalized drain to source on-resistance -i d , drain current(a) v gs = -2.5 v v gs = -2.0 v v gs = -1.5 v v gs = -3.5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 i d = -1 a v gs = -4.5 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 12345 40 80 120 160 200 240 pulse duration = 300 p s duty cycle = 2.0% max t j = 125 o c t j = 25 o c i d = - 0.5 a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.5 1.0 1.5 2.0 2.5 0 3 6 9 12 15 v dd = -5 v pulse duration = 300 p s duty cycle = 2.0% max t j = -55 o c t j = 25 o c t j = 125 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0001 0.001 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) 60 s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDZ391P p-channel 1.5v powertrench ? wl-csp mosfet FDZ391P rev.b1 www.fairchildsemi.com 4 figure 7. 024681012 0 1 2 3 4 5 i d = -1 a v dd = -15 v v dd = -10 v v dd = -5 v q g , gate charge(nc) -v gs , gate to source voltage(v) gate charge characteristics figure 8. 0.1 1 10 100 1000 20 50 f = 1 mhz v gs = 0 v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 2000 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 25 50 75 100 125 150 0 1 2 3 4 t a , case temperature ( o c ) v gs = - 2.5 v v gs = -4.5 v r t ja = 65 o c/w -i d , drain current (a) m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature figure 10. 0.1 1 10 0.01 0.1 1 10 10 s 60 dc 1 s 100 ms 10 ms 1 ms 100 us single pulse t j = max rated r t ja = 133 o c/w t a = 25 o c this area is limited by r ds(on) -v s , source1 to source2 voltage (v) -i s , source1 to source2 current (a) 30 f o r w a r d b i a s s a f e operating area figure 11. single pulse maximum power dissipation 10 -3 10 -2 10 -1 110 100 1000 1 10 0.5 v gs = -10 v single pulse r t ja = 133 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) 50 typical characteristics t j = 25 c unless otherwise noted
FDZ391P p-channel 1.5v powertrench ? wl-csp mosfet FDZ391P rev.b1 www.fairchildsemi.com 5 figure 12. transient thermal response curve 10 -3 10 -2 10 -1 110 100 1000 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse r t ja = 133 o c/w 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDZ391P p-channel 1.5v powertrench ? wl-csp mosfet FDZ391P rev.b1 www.fairchildsemi.com 6 dimensional outlin e and pad layout
FDZ391P rev.b1 www.fairchildsemi.com 7 FDZ391P p-channel 1.5v powertrench ? wl-csp mosfet rev. i37 anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fa richild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts expe rience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. farichild strongly encourages customers to purchase farichild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to farichild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. farichild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? 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